90512 tkim/21505ea tsim tb-00001137 no.8035-1/7 http://onsemi.com semiconductor components industries, llc, 2013 september, 2013 2sc5994 bipolar transistor 50v, 2a, low v ce ( sat ) , npn single pcp applicaitons ? voltage regulators, relay drivers, lamp drivers, electrical equipment features ? adoption of mbit process ? large current capacity ? low collector-to-emitter saturation voltage ? high-speed switching speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 100 v collector-to-emitter voltage v ces 100 v v ceo 50 v emitter-to-base voltage v ebo 6v collector current i c 2a collector current (pulse) i cp 4a base current i b 400 ma continued on next page. package dimensions unit : mm (typ) 7007b-004 ordering number : en8035a product & package information ? package : pcp ? jeita, jedec : sc-62, sot-89, to-243 ? minimum packing quantity : 1,000 pcs./reel packing type: td marking electrical connection td 1 : base 2 : collecto r 3 : emitter pcp 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 123 1.5 0.75 top view bottom view 2SC5994-TD-E fj lot no. 2 3 1
2sc5994 no.8035-2/7 continued from preceding page. parameter symbol conditions ratings unit collector dissipation p c when mounted on ceramic substrate (450mm 2 0.8mm) 1.3 w tc=25 c 3.5 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =50v, i e =0a 1 a emitter cutoff current i ebo v eb =4v, i c =0a 1 a dc current gain h fe 1v ce =2v, i c =100ma 200 560 h fe 2v ce =2v, i c =1.5a 40 gain-bandwidth product f t v ce =10v, i c =300ma 420 mhz output capacitance cob v cb =10v, f=1mhz 9 pf collector-to-emitter saturation voltage v ce (sat) i c =1a, i b =50ma 135 300 mv base-to-emitter saturation voltage v be (sat) i c =1a, i b =50ma 0.9 1.2 v collector-to-base breakdown voltage v (br)cbo i c =10 a, i e =0a 100 v collector-to-emitter breakdown voltage v (br)ces i c =100 a, r be =0 100 v v (br)ceo i c =1ma, r be = 50 v emitter-to-base breakdown voltage v (br)ebo i e =10 a, i c =0a 6 v turn-on time t on see speci ed test circuit. 30 ns storage time t stg 330 ns fall time t f 40 ns switching time test circuit ordering information device package shipping memo 2SC5994-TD-E pcp 1,000pcs./reel pb free v r r b v cc =25v i c =10i b1 = --10i b2 =700ma v be = --5v + + 50 input outpu t r l 470 f 100 f pw=20 s i b1 d.c. 1% i b2 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
2sc5994 no.8035-3/7 i c -- v ce collector current, i c -- a collector-to-emitter voltage, v ce -- v i c -- v be collector current, i c -- a base-to-emitter voltage, v be -- v 2.0 1.8 1.6 1.2 1.4 0.8 1.0 0.4 0.6 0.2 0 0.4 0 0.8 1.2 1.6 2.0 0.2 0.6 1.0 1.4 1.8 it07587 5ma 10ma 15ma 20ma i b =0ma 3ma 1ma 2ma ta=75 c 25 c --25 c v ce =2v 2.0 1.0 1.6 1.4 1.2 0.6 0.8 0.4 0.2 1.8 0 0 0.2 0.4 0.6 0.8 1.1 1.0 0.1 0.3 0.5 0.7 0.9 it07588 50ma 25ma 30ma v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- a cob -- v cb v ce (sat) -- i c v be (sat) -- i c collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v h fe -- i c f t -- i c collector current, i c -- a dc current gain, h fe gain-bandwidth product, f t -- mhz collector current, i c -- a 1.0 0.1 0.01 7 5 3 27 5 3 23 2 it07593 0.01 0.1 2 3 5 7 2 3 5 7 5 3 2 10 5 7 0.1 37 25 37 7 25 3 2 1.0 10 5 it07591 f=1mhz 0.1 2 3 5 7 2 3 5 0.01 0.01 0.1 23 57 23 57 23 1.0 t a=75 c - -25 c it07592 i c / i b =20 25 c 3 1.0 3 0.01 0.1 1.0 ta= --25 c 2 5 c 75 c 2 7 5 23 57 23 23 57 i c / i b =20 it07594 ta=75 c 25 c --25 c 7 100 1000 7 5 3 2 5 0.01 3 25 0.1 73 257 23 1.0 7 100 1000 7 5 3 2 3 5 0.01 3 25 0.1 73 257 23 1.0 v ce =2v it07589 it07590 v ce =10v i c / i b =50 ta=75 c - -25 c 25 c
2sc5994 no.8035-4/7 a s o collector-to-emitter voltage, v ce -- v collector current, i c -- a 0 1.4 0.6 0.8 1.0 1.2 1.3 0.4 0.2 20 060 40 80 100 140 120 160 p c -- ta it07596 collector dissipation, p c -- w ambient temperature, ta -- c mounted on a ceramic board (450mm 2 ? 0.8mm) it07595 2 3 5 7 2 3 5 7 2 3 5 7 1.0 10 0.1 0.01 23 57 0.1 1.0 23 57 10 23 57 100 dc operation 100 s 500 s 10ms i cp =4a i c =2a 1ms 100ms < 10 s tc=25 c single pulse 0 4.0 3.0 2.5 3.5 2.0 1.5 1.0 0.5 20 060 40 80 100 140 120 160 p c -- tc it07597 case temperature, tc -- c collector dissipation, p c -- w
2sc5994 no.8035-5/7 embossed taping speci cation 2SC5994-TD-E
2sc5994 no.8035-6/7 outline drawing land pattern example 2SC5994-TD-E mass (g) unit 0.058 * for reference mm unit: mm 2.2 1.0 1.8 1.5 0.9 3.7 1.5 3.0 1.0 45 45
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